常规射频磁控溅射沉积c轴倾斜ScAlN薄膜技术

K. Arakawa, T. Yanagitani, K. Kano, Akihiko Teshigahara, M. Akiyama
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引用次数: 18

摘要

由于需要溅射粒子的单向斜入射来获得c轴倾斜结构,因此用共溅射法合成c轴倾斜的ScAlN薄膜是困难的。为了实现斜入射,提出了c轴倾斜薄膜沉积的单源溅射技术。利用ScAl合金靶材代替共溅射实现了ScAl薄膜的合成。采用该沉积技术可获得c轴高度倾斜的ScAlN薄膜(倾斜角度为33°)。薄膜传感器损耗测量结果表明,加入sc后,AlN的纵向弹性和剪切弹性均有所降低。c轴高倾斜的ScAlN薄膜虽然取向度较低,但其k15′值却高达0.32。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Deposition techniques of c-axis-tilted ScAlN films by conventional RF magnetron sputtering
It is difficult to synthesize c-axis tilted ScAlN films by using co-sputtering because unidirectional oblique incident of sputtered particles is needed to obtain c-axis tilted structure. To realize the oblique incident single source sputtering technique was proposed for c-axis tilted film deposition. ScAl alloy target was used to achieve ScAlN film synthesis instead of co-sputtering. As a result c-axis highly tilted ScAlN film (tilt angle =33 °) was obtained by using this deposition technique. From the result of film transducer loss measurement we found that longitudinal and shear elasticity of AlN decreases by adding Sc. c-axis highly tilted ScAlN film showed giant k15' values of 0.32 in spite of its low degree of orientation.
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