SiGe hbt交流性能优化的技术仿真方法

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979552

J.B. Johnson, A. Stricker, A. Joseph, J. Slinkman

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引用次数: 13

摘要

提出了一种同时校准SiGe HBT工艺和器件仿真的方法，并将其应用于峰值截止频率为100 GHz至200 GHz的SiGe BiCMOS HBT。通过与实验器件的比较，证明了HBT交流器件关键特性的预测仿真能力。

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A technology simulation methodology for AC-performance optimization of SiGe HBTs

A methodology for simultaneous calibration of SiGe HBT process and device simulation is presented and applied to SiGe BiCMOS HBTs with peak cut-off frequencies ranging from 100 GHz to 200 GHz. Predictive simulation capability is demonstrated for critical HBT AC device characteristics through comparison with experimental devices.

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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)

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