高功率激光二极管的退化特征

J. Jiménez, J. Anaya, V. Hortelano, J. Souto, A. Martín-Martín
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引用次数: 1

摘要

高功率激光二极管的快速灾难性退化是由于在激光工作过程中,在激光结构的有效部分内部产生了扩展缺陷。局部热点作为驱动力的致动器起着主要作用,导致扩展晶体缺陷的形成。降解激光功率阈值对封装引起的应力和多层结构的导热系数非常敏感。量子阱和势垒的热导率不仅受到低维的抑制,而且还受到界面质量的抑制,这是激光二极管退化的主要因素。对二极管有源区热点引起的热应力进行建模,可以描述高功率激光二极管的退化机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Degradation signatures of high power laser diodes
Rapid and catastrophic degradation of high power laser diodes occur because of the generation of extended defects inside the active parts of the laser structure during the laser operation. Local hot spots play a major role as actuators of the driven force leading to the formation of extended crystal defects. The laser power threshold for degradation is very sensitive to the packaging induced stress, and the thermal conductivity of the multilayer structure. The thermal conductivity of the QW and the barriers is suppressed by the low dimensionality but also by the quality of the interfaces being a major actor of the laser diode degradation. Modelling the thermal stresses induced by the hot spots in the active region of the diode permits to describe the degradation mechanisms of high power laser diodes.
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