(Ga1−xInx)2Se3, 0.32≤x≤0.42相的晶体生长及所得单晶的物理性质研究

2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI:10.1109/OMEE.2012.6464856

I. Ivashchenko, V. Halyan, I. V. Danylyuk, V. Z. Pankevuch, G. Davydyuk, I. Olekseyuk

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引用次数: 0

摘要

采用差热分析(DTA)和x射线衍射(XRD)方法研究了Ga2Se3-In2Se3体系的相图。采用垂直Bridgman法在γ - 2相存在区生长出成分为(Ga0.6In0.4)2Se3和(Ga0.594In0.396Er0.01)2Se3的单晶。研究了生长晶体的吸收光谱。估计光学带隙为1.95±0.01 eV。测定了(Ga0.6In0.4)2Se3 (R = 500 MΩ)和(Ga0.594In0.396Er0.01)2Se3 (R = 210 MΩ)的单晶电阻。

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Crystal growth of the (Ga1−xInx)2Se3, 0.32≤x≤0.42 phase and investigation of physical properties of obtained single crystals

The phase diagram of the Ga2Se3-In2Se3 system as investigated by differential-thermal analysis (DTA) and X-ray diffraction (XRD) method. The single crystals from the area of existence of the γ2 phase with the compositions (Ga0.6In0.4)2Se3 and (Ga0.594In0.396Er0.01)2Se3 were grown by a vertical Bridgman method. Absorption spectra of the grown crystals were studied. The estimated optical band gap is 1.95±0.01 eV. The resistance of the single crystals of (Ga0.6In0.4)2Se3 (R = 500 MΩ) and (Ga0.594In0.396Er0.01)2Se3 (R = 210 MΩ) was measured.

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2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)

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