电荷有序绝缘体BaBiO3薄膜物理性能的应变诱导修饰

S. Sarkar, S. Chowdhury, R. Raghunathan, R. Choudhary, D. Phase
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引用次数: 1

摘要

采用脉冲激光沉积技术在Si(001)和SrTiO3 (STO)(001)衬底上制备了取向薄膜。在Si衬底上生长的薄膜表面形貌比STO衬底更均匀。利用拉曼光谱和x射线光电子能谱(XPS)技术研究了氯化钡薄膜的物理性质。室温拉曼光谱证实了体膜和薄膜中电荷有序的存在。然而,我们的XPS结果表明,体积δ<1的Bi氧化态(4-δ)和(4+δ)的电荷歧化在薄膜中被修饰为δ=1。采用脉冲激光沉积技术在Si(001)和SrTiO3 (STO)(001)衬底上制备了取向薄膜。在Si衬底上生长的薄膜表面形貌比STO衬底更均匀。利用拉曼光谱和x射线光电子能谱(XPS)技术研究了氯化钡薄膜的物理性质。室温拉曼光谱证实了体膜和薄膜中电荷有序的存在。然而,我们的XPS结果表明,体积δ<1的Bi氧化态(4-δ)和(4+δ)的电荷歧化在薄膜中被修饰为δ=1。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Strain induced modification in physical properties of charge-ordered insulator BaBiO3 thin films
Oriented thin films have been prepared using pulsed laser deposition technique on Si (001) and SrTiO3 (STO) (001) substrates. The surface morphologies of films grown on Si substrates are more uniform than STO substrate. Physical properties of BaBiO3 thin films have been studied using Raman and x-ray photoelectron spectroscopic (XPS) techniques. Room temperature Raman spectroscopy confirms the presence of charge-ordering both in bulk and thin films. Our XPS results however show that the charge-disproportionation of Bi oxidation state (4-δ) and (4+δ) with δ<1 in bulk has been modified in thin films to δ=1.Oriented thin films have been prepared using pulsed laser deposition technique on Si (001) and SrTiO3 (STO) (001) substrates. The surface morphologies of films grown on Si substrates are more uniform than STO substrate. Physical properties of BaBiO3 thin films have been studied using Raman and x-ray photoelectron spectroscopic (XPS) techniques. Room temperature Raman spectroscopy confirms the presence of charge-ordering both in bulk and thin films. Our XPS results however show that the charge-disproportionation of Bi oxidation state (4-δ) and (4+δ) with δ<1 in bulk has been modified in thin films to δ=1.
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