应变补偿InGaAs(N)-GaAsP-GaAs (/spl λ / bbb1.17 /spl mu/m)量子阱激光器的激光特性和温度分析

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-11-12 DOI:10.1109/LEOS.2001.969312

N. Tansu, Ying-lan Chang, T. Takeuchi, D. Bour, S. Corzine, M. Tan, L. Mawst

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引用次数: 0

摘要

只提供摘要形式。MOCVD用于生长高性能、高应变InGaAs(N)-GaAs量子阱(QW)激光器。具有高应变In/sub 0.35/Ga/sub 0.65/As QW和GaAs/sub 0.85/P/sub 0.15/拉伸-应变势垒的二极管激光器，在1.17 /spl mu/m波长处具有极低的阈值电流密度(J/sub / = 65 a/ cm/sup 2/， L = 1500 /spl mu/m)和透明电流密度(J/sub / tr/ = 30 a/ cm/sup 2/)。对于短腔(L = 500 /spl mu/m)器件，外差分量子效率(/spl eta//sub d/)高达56%。

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Lasing characteristics and temperature analysis of strain compensated InGaAs(N)-GaAsP-GaAs (/spl lambda/>1.17 /spl mu/m) quantum well lasers

Summary form only given. MOCVD is used for the growth of high performance, highly-strained InGaAs(N)-GaAs quantum-well (QW) lasers. Diode lasers, with a highly-strained In/sub 0.35/Ga/sub 0.65/As QW and GaAs/sub 0.85/P/sub 0.15/ tensile-strained barriers, are demonstrated with very low threshold current density (J/sub th/ = 65 A/cm/sup 2/, L = 1500 /spl mu/m) and transparency current density (J/sub tr/ = 30 A/cm/sup 2/), at a wavelength of 1.17 /spl mu/m. External differential quantum efficiency (/spl eta//sub d/) as high as 56% has also been achieved for the short cavity (L = 500 /spl mu/m) devices.

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LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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