High performances 3D heterogeneous integrated devices based on 3D silicon capacitive interposer

One of the key issues in today's 3D integration topic is to correctly design and assemble silicon-related technologies (ICs, IPDs, Si-interposers and so on) with non-silicon-related technologies (ceramic components, plastic molded chips, crystal oscillators as examples), in a structure that takes advantage of the silicon base, like thin-pitch TSVs, RDL or WLCSP. Such structure would help moving from the COB era, to a real 3D heterogeneous platform era. Two successful examples, with high integration level and optimized performances, will be detailed in this paper.