一种采用多层高密度金属的三轴MEMS电容式传感器,用于集成CMOS-MEMS加速度计

D. Yamane, T. Konishi, T. Matsushima, H. Toshiyoshi, K. Machida, K. Masu
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引用次数: 1

摘要

本文报道了一种新型的三轴微机电系统(MEMS)电容式传感器。黄金的高密度使我们能够最小化布朗噪声,从而减少证明质量的足迹。为了优化机械弹簧在三轴运动中的灵活性,我们新开发了多层金属弹簧结构。所有的MEMS结构都采用镀金制成,作为后互补金属氧化物半导体(CMOS)工艺,因此MEMS传感器可以作为集成的CMOS-MEMS加速度计实现。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
A tri-axis MEMS capacitive sensor using multi-layered high-density metal for an integrated CMOS-MEMS accelerometer
This paper reports a novel tri-axis microelectro-mechanical systems (MEMS) capacitive sensor utilizing multi-layer electroplated gold. The high density of gold has enabled us to minimize the Brownian noise and hence to reduce the footprint of the proof mass. To optimize the flexibility of the mechanical springs for tri-axis motions, we have newly developed multi-layered metal spring structures. All the MEMS structures have been made by gold electroplating, used as a post complementary metal-oxide semiconductor (CMOS) process, and thereby the MEMS sensors can be implemented as integrated CMOS-MEMS accelerometers.
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