采用CH/sub /H/sub / 2/干刻蚀和再生制备1.5 /spl μ m波长GaInAsP/InP 5层量子线激光器

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-11-12 DOI:10.1109/LEOS.2001.968845

Hideki Midorikawa, K. Muranushi, N. Nunoya, T. Sano, S. Tamura, S. Arai

{"title":"采用CH/sub /H/sub / 2/干刻蚀和再生制备1.5 /spl μ m波长GaInAsP/InP 5层量子线激光器","authors":"Hideki Midorikawa, K. Muranushi, N. Nunoya, T. Sano, S. Tamura, S. Arai","doi":"10.1109/LEOS.2001.968845","DOIUrl":null,"url":null,"abstract":"We report on the lasing properties of SC 5-layered Q-wire lasers with wire width of 23 nm. The spontaneous emission efficiency below the threshold was almost comparable to that of the Q-film lasers up to 85 C, that revealed low-damage property of the etched/regrown interfaces.","PeriodicalId":18008,"journal":{"name":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","volume":"2 1","pages":"407-408 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"2001-11-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"1.5 /spl mu/m wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH/sub 4//H/sub 2/ dry etching and regrowth\",\"authors\":\"Hideki Midorikawa, K. Muranushi, N. Nunoya, T. Sano, S. Tamura, S. Arai\",\"doi\":\"10.1109/LEOS.2001.968845\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on the lasing properties of SC 5-layered Q-wire lasers with wire width of 23 nm. The spontaneous emission efficiency below the threshold was almost comparable to that of the Q-film lasers up to 85 C, that revealed low-damage property of the etched/regrown interfaces.\",\"PeriodicalId\":18008,\"journal\":{\"name\":\"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)\",\"volume\":\"2 1\",\"pages\":\"407-408 vol.2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2001-11-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/LEOS.2001.968845\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LEOS.2001.968845","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

报道了线宽为23nm的SC - 5层q线激光器的激光特性。在阈值以下的自发发射效率几乎与高达85℃的q膜激光器相当，显示出蚀刻/再生界面的低损伤特性。

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1.5 /spl mu/m wavelength GaInAsP/InP 5-layered quantum-wire lasers fabricated by CH/sub 4//H/sub 2/ dry etching and regrowth

We report on the lasing properties of SC 5-layered Q-wire lasers with wire width of 23 nm. The spontaneous emission efficiency below the threshold was almost comparable to that of the Q-film lasers up to 85 C, that revealed low-damage property of the etched/regrown interfaces.

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来源期刊

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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