{"title":"光电器件用纳米氧化锡粉的光致发光研究","authors":"L. C. Nehru, V. Swaminathan, C. Sanjeeviraja","doi":"10.5923/J.MATERIALS.20120202.02","DOIUrl":null,"url":null,"abstract":"Nanocrystalline tin oxide (SnO2) powders have been synthesized by a low temperature chemical precipitation method. As-prepared and heated powders were characterized by XRD, SEM and luminescence studies. Crystallographic parameters such as crystallite size, lattice parameters and dislocation density in SnO2 nanocrystalline powders were calcu- lated by Rietveld analysis. The average crystallite size of 9 - 43 nm was obtained for SnO2 powders through controlled heat treatment process. The washed powders morphology was almost spherical in shape and average agglomerate crystal size was between 0.2 - 0.4 μm. A Photoluminescence (PL) study was measured at an excitation wavelength of 265 nm for as-prepared and annealed powders; it showed a broad emission peak at 417 nm for all powders. The highest PL emission was attained for the powder annealed at 500℃. The synthesized nanocrystalline SnO2 oxide semiconductor material could be suitable for making optoelectronic and sensor devices.","PeriodicalId":7420,"journal":{"name":"American Journal of Materials Science","volume":"115 1","pages":"6-10"},"PeriodicalIF":0.0000,"publicationDate":"2012-08-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"83","resultStr":"{\"title\":\"Photoluminescence Studies on Nanocrystalline Tin Oxide Powder for Optoelectronic Devices\",\"authors\":\"L. C. Nehru, V. Swaminathan, C. Sanjeeviraja\",\"doi\":\"10.5923/J.MATERIALS.20120202.02\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Nanocrystalline tin oxide (SnO2) powders have been synthesized by a low temperature chemical precipitation method. As-prepared and heated powders were characterized by XRD, SEM and luminescence studies. Crystallographic parameters such as crystallite size, lattice parameters and dislocation density in SnO2 nanocrystalline powders were calcu- lated by Rietveld analysis. The average crystallite size of 9 - 43 nm was obtained for SnO2 powders through controlled heat treatment process. The washed powders morphology was almost spherical in shape and average agglomerate crystal size was between 0.2 - 0.4 μm. A Photoluminescence (PL) study was measured at an excitation wavelength of 265 nm for as-prepared and annealed powders; it showed a broad emission peak at 417 nm for all powders. The highest PL emission was attained for the powder annealed at 500℃. The synthesized nanocrystalline SnO2 oxide semiconductor material could be suitable for making optoelectronic and sensor devices.\",\"PeriodicalId\":7420,\"journal\":{\"name\":\"American Journal of Materials Science\",\"volume\":\"115 1\",\"pages\":\"6-10\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-08-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"83\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"American Journal of Materials Science\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.5923/J.MATERIALS.20120202.02\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"American Journal of Materials Science","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.5923/J.MATERIALS.20120202.02","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Photoluminescence Studies on Nanocrystalline Tin Oxide Powder for Optoelectronic Devices
Nanocrystalline tin oxide (SnO2) powders have been synthesized by a low temperature chemical precipitation method. As-prepared and heated powders were characterized by XRD, SEM and luminescence studies. Crystallographic parameters such as crystallite size, lattice parameters and dislocation density in SnO2 nanocrystalline powders were calcu- lated by Rietveld analysis. The average crystallite size of 9 - 43 nm was obtained for SnO2 powders through controlled heat treatment process. The washed powders morphology was almost spherical in shape and average agglomerate crystal size was between 0.2 - 0.4 μm. A Photoluminescence (PL) study was measured at an excitation wavelength of 265 nm for as-prepared and annealed powders; it showed a broad emission peak at 417 nm for all powders. The highest PL emission was attained for the powder annealed at 500℃. The synthesized nanocrystalline SnO2 oxide semiconductor material could be suitable for making optoelectronic and sensor devices.