无序量子阱激子局域化与发光光谱的关系

IF 1.5 4区 物理与天体物理 Q3 PHYSICS, CONDENSED MATTER
U. Jahn, H. Grahn
{"title":"无序量子阱激子局域化与发光光谱的关系","authors":"U. Jahn, H. Grahn","doi":"10.1002/1521-3951(200211)234:1<443::AID-PSSB443>3.0.CO;2-R","DOIUrl":null,"url":null,"abstract":"We report on basic physical aspects of exciton localization in quantum wells (QWs) grown by molecular-beam epitaxy under very different conditions. For GaAs/(Al, Ga)As QWs, the relation between photoluminescence (PL), PL excitation, and μ-PL spectra, as well as the effective mobility edge of excitons in QWs are discussed. Exciton localization in (In, Ga)N/GaN and GaN/(Al, Ga)N multiple QWs is investigated to determine its influence on the quantum efficiency, which is an important issue for the application of this material system in short-wavelength light emitters.","PeriodicalId":20406,"journal":{"name":"Physica Status Solidi B-basic Solid State Physics","volume":"103 1","pages":"443-452"},"PeriodicalIF":1.5000,"publicationDate":"2002-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"The relation between exciton localization and luminescence spectra for disordered quantum wells\",\"authors\":\"U. Jahn, H. Grahn\",\"doi\":\"10.1002/1521-3951(200211)234:1<443::AID-PSSB443>3.0.CO;2-R\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We report on basic physical aspects of exciton localization in quantum wells (QWs) grown by molecular-beam epitaxy under very different conditions. For GaAs/(Al, Ga)As QWs, the relation between photoluminescence (PL), PL excitation, and μ-PL spectra, as well as the effective mobility edge of excitons in QWs are discussed. Exciton localization in (In, Ga)N/GaN and GaN/(Al, Ga)N multiple QWs is investigated to determine its influence on the quantum efficiency, which is an important issue for the application of this material system in short-wavelength light emitters.\",\"PeriodicalId\":20406,\"journal\":{\"name\":\"Physica Status Solidi B-basic Solid State Physics\",\"volume\":\"103 1\",\"pages\":\"443-452\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2002-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Physica Status Solidi B-basic Solid State Physics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.1002/1521-3951(200211)234:1<443::AID-PSSB443>3.0.CO;2-R\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"PHYSICS, CONDENSED MATTER\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Physica Status Solidi B-basic Solid State Physics","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.1002/1521-3951(200211)234:1<443::AID-PSSB443>3.0.CO;2-R","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 2

摘要

我们报道了在非常不同的条件下通过分子束外延生长的量子阱中激子局域化的基本物理方面。讨论了GaAs/(Al, Ga)As量子阱中光致发光(PL)、PL激发和μ-PL光谱之间的关系以及量子阱中激子的有效迁移边界。研究了(in, Ga)N/GaN和GaN/(Al, Ga)N多量子阱中激子局域化对量子效率的影响,这是该材料体系在短波长的光源中应用的一个重要问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
The relation between exciton localization and luminescence spectra for disordered quantum wells
We report on basic physical aspects of exciton localization in quantum wells (QWs) grown by molecular-beam epitaxy under very different conditions. For GaAs/(Al, Ga)As QWs, the relation between photoluminescence (PL), PL excitation, and μ-PL spectra, as well as the effective mobility edge of excitons in QWs are discussed. Exciton localization in (In, Ga)N/GaN and GaN/(Al, Ga)N multiple QWs is investigated to determine its influence on the quantum efficiency, which is an important issue for the application of this material system in short-wavelength light emitters.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Physica Status Solidi B-basic Solid State Physics
Physica Status Solidi B-basic Solid State Physics 物理-物理:凝聚态物理
CiteScore
3.30
自引率
6.20%
发文量
321
审稿时长
2 months
期刊介绍: physica status solidi is devoted to the thorough peer review and the rapid publication of new and important results in all fields of solid state and materials physics, from basic science to applications and devices. Being among the largest and most important international publications, the pss journals publish review articles, letters and original work as well as special issues and conference contributions. physica status solidi b – basic solid state physics is devoted to topics such as theoretical and experimental investigations of the atomistic and electronic structure of solids in general, phase transitions, electronic and optical properties of low-dimensional, nano-scale, strongly correlated, or disordered systems, superconductivity, magnetism, ferroelectricity etc.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信