Fabrication of enhancement-mode high electron mobility transistors (HEMTs) by electrodeless photoelectrochemical etching

In this paper, we adopted electrodeless photoelectrochemical etching technology to fabricate the enhancement-mode high electron mobility transistors (HEMTs). The technique of photoelectrochemical etching is a low damage etching method. Enhancement-mode recess gate HEMTs were successfully fabricated after electrodeless photoelectrochemical etching. While, in terms of IDmax, compared with 505 mA/mm of non-etched depletion devices, the output current of the recess gate device is slightly reduced to 495 mA/mm. It shows that this etching method has low etching damage to GaN and is suitable for the fabrication of recess gate devices.