Z. Ren, P. Solomon, T. Kanarsky, B. Doris, O. Dokumaci, P. Oldiges, R. Roy, E. Jones, M. Ieong, R.J. Miller, W. Haensch, H.-S.P. Wong
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Examination of hole mobility in ultra-thin body SOI MOSFETs
This paper presents an experimental examination of hole mobility in ultra-thin body (UTB) SOI MOSFETs, covering wide ranges of T/sub SOI/ (between /spl sim/3.7 nm and /spl sim/50 nm), and temperature (between /spl sim/79 K and /spl sim/320 K). This paper addresses the observed strong degradation of hole mobility at extremely thin T/sub SOI/, proposing an additional surface roughness scattering mechanism for the thinnest samples due to the perturbation of the conducting band potential stemming from spatial confinement.
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