Demin Liu, Po-Chih Chen, C. Hsiung, Shin-Yi Huang, Yan-Pin Huang, S. Verhaverbeke, G. Mori, Kuan-Neng Chen
{"title":"低温Cu/SiO2杂化键合与金属钝化","authors":"Demin Liu, Po-Chih Chen, C. Hsiung, Shin-Yi Huang, Yan-Pin Huang, S. Verhaverbeke, G. Mori, Kuan-Neng Chen","doi":"10.1109/VLSITechnology18217.2020.9265008","DOIUrl":null,"url":null,"abstract":"Cu/SiO2 hybrid bonding process with short duration (1 minute) has been successfully performed at low temperature (120°C) under the atmosphere with metal passivation material. Electrical performance (over 15K daisy chain and $10^{-8}\\Omega-\\mathrm{cm}^{2}$ specific contact resistance), mechanical strength $(> 15\\mathrm{kgf})$, and reliability have been conducted to verify its excellent bonding quality. This method of hybrid bonding therefore provides a wide range of applications and a new solution for 3D integration.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"19 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Low Temperature Cu/SiO2 Hybrid Bonding with Metal Passivation\",\"authors\":\"Demin Liu, Po-Chih Chen, C. Hsiung, Shin-Yi Huang, Yan-Pin Huang, S. Verhaverbeke, G. Mori, Kuan-Neng Chen\",\"doi\":\"10.1109/VLSITechnology18217.2020.9265008\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Cu/SiO2 hybrid bonding process with short duration (1 minute) has been successfully performed at low temperature (120°C) under the atmosphere with metal passivation material. Electrical performance (over 15K daisy chain and $10^{-8}\\\\Omega-\\\\mathrm{cm}^{2}$ specific contact resistance), mechanical strength $(> 15\\\\mathrm{kgf})$, and reliability have been conducted to verify its excellent bonding quality. This method of hybrid bonding therefore provides a wide range of applications and a new solution for 3D integration.\",\"PeriodicalId\":6850,\"journal\":{\"name\":\"2020 IEEE Symposium on VLSI Technology\",\"volume\":\"19 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSITechnology18217.2020.9265008\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSITechnology18217.2020.9265008","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low Temperature Cu/SiO2 Hybrid Bonding with Metal Passivation
Cu/SiO2 hybrid bonding process with short duration (1 minute) has been successfully performed at low temperature (120°C) under the atmosphere with metal passivation material. Electrical performance (over 15K daisy chain and $10^{-8}\Omega-\mathrm{cm}^{2}$ specific contact resistance), mechanical strength $(> 15\mathrm{kgf})$, and reliability have been conducted to verify its excellent bonding quality. This method of hybrid bonding therefore provides a wide range of applications and a new solution for 3D integration.
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
