N. Goodhue, D. Danovitch, Jeff Moussodji Moussodji, Benoit Papineau, É. Duchesne
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These tests recommended the use of an aluminum carrier. Both polyimide and thermoplastic adhesive demonstrated improved results (20 µm warpage) with this carrier as compared to the freestanding substrate (40-100 µm), although the tendency of the thermoplastic to deform at elevated temperatures and stresses was identified as a concern. Subsequent assembly experiments on production scale equipment validated both the improved warpage control obtained by a temporary carrier solution and the superior performance of the polyimide adhesive. Results of the polyimide solution are presented through detailed comparison to a standard process. Significant improvements were observed in such aspects as die warpage (20-30 µm vs 130-140 µm), interconnect height consistency (56-59 µm vs 55-68 µm) and post underfill assembly warpage (150 µm vs 250 µm). 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引用次数: 3
摘要
本文介绍了一种临时载流子技术,以控制倒装芯片组装过程中有机无芯衬底的弯曲,该技术利用了高通量的大规模回流芯片连接技术。为了最佳地选择合适的载体和粘合剂,通过开发一种新的阴影-莫尔条纹测量技术,研究了在芯片连接过程的模拟温度偏移过程中保持衬底平坦度所需的力。然后,通过建模和力学测试以及在芯片连接温度曲线期间对独立基材和粘合基材的热影-摩尔对比,研究了不同的临时粘合剂和载体。这些测试建议使用铝载体。与独立基板(40-100 μ m)相比,聚酰亚胺和热塑性胶粘剂的效果都有所改善(20 μ m翘曲),尽管热塑性塑料在高温和应力下变形的趋势被认为是一个问题。随后在生产规模的设备上进行的装配实验验证了临时载体溶液改善的翘曲控制效果和聚酰亚胺胶粘剂的优越性能。通过与标准工艺的详细比较,给出了聚酰亚胺溶液的结果。在模具翘曲度(20-30 μ m vs 130-140 μ m)、互连高度一致性(56-59 μ m vs 55-68 μ m)和后下填料装配翘曲度(150 μ m vs 250 μ m)等方面观察到显著改善。研究结果表明,需要进一步开发制造级脱粘工艺,并最终将整个解决方案集成到大批量生产的倒装芯片组装工艺中。
Warpage Control During Mass Reflow Flip Chip Assembly Using Temporary Adhesive Bonding
This paper presents work undertaken to investigate a temporary carrier technique to control the warpage of an organic coreless substrate during a flip chip assembly process that exploits the higher throughput technique of mass reflow chip joining. To optimally select an appropriate carrier and adhesive, a study of the forces necessary to maintain substrate flatness throughout a simulated temperature excursion of the chip joining process was conducted by developing a novel adaptation of the Shadow-Moiré fringe measurement technique. Different temporary adhesives and carriers were then investigated by modeling and mechanical testing as well as by thermal Shadow-Moiré comparison of free-standing versus bonded substrates during the chip joining temperature profile. These tests recommended the use of an aluminum carrier. Both polyimide and thermoplastic adhesive demonstrated improved results (20 µm warpage) with this carrier as compared to the freestanding substrate (40-100 µm), although the tendency of the thermoplastic to deform at elevated temperatures and stresses was identified as a concern. Subsequent assembly experiments on production scale equipment validated both the improved warpage control obtained by a temporary carrier solution and the superior performance of the polyimide adhesive. Results of the polyimide solution are presented through detailed comparison to a standard process. Significant improvements were observed in such aspects as die warpage (20-30 µm vs 130-140 µm), interconnect height consistency (56-59 µm vs 55-68 µm) and post underfill assembly warpage (150 µm vs 250 µm). The results warrant further work to develop a manufacturing level debonding process and ultimately integrate the entire solution into a high volume production flip chip assembly process.