{"title":"不同存取几何形状的7.5 nm双栅Si非场效应管的QDAME模拟","authors":"S. Laux, A. Kumar, M. Fischetti","doi":"10.1109/IEDM.2002.1175938","DOIUrl":null,"url":null,"abstract":"We describe QDAME, a new device simulation program which solves self-consistently the Poisson and Schrodinger equations in two space dimensions under the approximation of ballistic transport. The effects of differing access geometries on 7.5 nm double-gate Si FETs are discussed.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"50 1","pages":"715-718"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"12","resultStr":"{\"title\":\"QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries\",\"authors\":\"S. Laux, A. Kumar, M. Fischetti\",\"doi\":\"10.1109/IEDM.2002.1175938\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We describe QDAME, a new device simulation program which solves self-consistently the Poisson and Schrodinger equations in two space dimensions under the approximation of ballistic transport. The effects of differing access geometries on 7.5 nm double-gate Si FETs are discussed.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"50 1\",\"pages\":\"715-718\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"12\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175938\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175938","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
QDAME simulation of 7.5 nm double-gate Si nFETs with differing access geometries
We describe QDAME, a new device simulation program which solves self-consistently the Poisson and Schrodinger equations in two space dimensions under the approximation of ballistic transport. The effects of differing access geometries on 7.5 nm double-gate Si FETs are discussed.
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