用于压电MEMS的外延PZT的商业化生产

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF) Pub Date : 2020-07-01 DOI:10.1109/IFCS-ISAF41089.2020.9234898

Ryoma Miyake, M. Kiuchi, S. Yoshida, Shuji Tanaka, G. Fox

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引用次数: 1

摘要

描述了一种用于压电MEMS应用的商业生产的单晶样外延PZT薄膜。厚度为$1\ \mu \ mathm {m}$至$2\ \mu \ mathm {m}$的薄膜，典型的横向压电d31系数为- 185 pm/V，相对介电常数为430，介电损耗为0.015。这些薄膜可用于压电MEMS器件的开发和生产。

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Commercial Production of Epitaxial PZT for Piezoelectric MEMS Applications

A commercially produced monocrystalline-like epitaxial PZT film is described for piezoelectric MEMS applications. Films with a thickness of $1\ \mu \mathrm{m}$ to $2\ \mu \mathrm{m}$ exhibit a typical transverse piezoelectric d31 coefficient of −185 pm/V, relative dielectric permittivity of 430 and dielectric loss of 0.015. These films are commercially available for piezoelectric MEMS device development and production.

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来源期刊

2020 Joint Conference of the IEEE International Frequency Control Symposium and International Symposium on Applications of Ferroelectrics (IFCS-ISAF)

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