超高速按比例缩小自对准SEG SiGe hbt

Technical digest. International Electron Devices Meeting Pub Date : 2002-12-08 DOI:10.1109/IEDM.2002.1175951

K. Washio, E. Ohue, R. Hayami, A. Kodama, H. Shimamoto, M. Miura, K. Oda, I. Suzumura, T. Tominari, T. Hashimoto

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引用次数: 16

摘要

研制了一种自对准选择性外延生长(SEG) SiGe HBT，该HBT具有漏斗状发射极，其结构针对发射极尺寸缩小到100 nm进行了优化。该SiGe HBT具有4.9 ps的ECL门延迟，并在超高速静态分频器中实现，最大工作频率为81 GHz。

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Ultra-high-speed scaled-down self-aligned SEG SiGe HBTs

A self-aligned selective-epitaxial-growth (SEG) SiGe HBT with a funnel-shape emitter electrode, which is structurally optimized for an emitter being scaled-down towards 100 nm, was developed. This SiGe HBT has an ECL gate delay of 4.9 ps, and implemented in an ultra-high-speed static frequency divider, produces a maximum operating frequency of 81 GHz.

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来源期刊

Technical digest. International Electron Devices Meeting

CiteScore

4.50

自引率

0.00%

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