前驱体浓度对喷雾热解制备WO3薄膜结构、光学和电学性能的影响

Farhan Mohammed, E. Salim, A. Hassan, M. Wahid
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引用次数: 0

摘要

采用化学喷雾法制备了n型wo3多晶薄膜,优化参数为:物质浓度为80 mM,衬底温度为350℃。通过紫外可见光谱、x射线衍射、场发射扫描电镜、能量色散x射线光谱、原子力显微镜和电流-电压等手段研究了wo3薄膜的物理性质。在50 ~ 90mm的不同摩尔浓度的玻璃表面沉积氧化钨。在wo3薄膜的紫外可见光谱中,透射率(78% ~ 53%)、反射率(9.63% ~ 5.02%)、能隙(3.40eV ~ 2.63 eV)分别下降。优化后的wo3薄膜的x射线衍射为多晶,具有单斜相,在2 = 24.19时首选取向(hkl)为200。从FESEM和EDX图像中,发现其具有多纤维网络。该纤维的平均直径为266 nm,在80 mM浓度下,钨氧比(W/O)为2.6,化学计量量为68.6%。原子力显微镜观察表明,氧化钨薄层具有纳米结构。平均表面粗糙度为5.3 nm,均方根为8.6 nm。wo3薄膜的电阻率最低,为2.393 × 108,激活能为0.298 eV,是衬底温度和浓度下电流电压的最佳参数。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Effect of Precursor Concentration on the Structural, Optical, and Electrical Properties of WO3 Thin Films Prepared by Spray Pyrolysis
Using a chemical spray technique, an n-type WO 3 polycrystalline thin film was prepared with optimizing parameters (molarity concentration of 80 mM and a substrate temperature of 350 °C). Study the physical properties of WO 3 thin film via UV-Visible spectroscopy, XRD, Field Emission-Scanning Electron Microscope, Energy Dispersive X-ray Spectroscopy, Atomic Force Microscopy, and current-voltage. Tungsten oxide was deposited on glass surfaces at different molarities ranging from 50–90mM. In the UV-Visible spectrum of the WO 3 thin film, it was found that the transmittance, reflectivity, and energy gap decreased (78%–53%), (9.63%–5.02%), and (3.40eV–2.63 eV), respectively. The X-ray diffraction of the WO 3 film at the optimized was poly-crystalline and had a monoclinic phase, and the preferred orientation (hkl) was 200 at 2 = 24.19. From the image FESEM and EDX, it was found that it has a multi-fibrous network. The average diameter of the fiber is 266 nm, and the ratio of tungsten to oxygen (W/O) is 2.6, with a stoichiometric of 68.6% at the 80 mM concentration. The Atomic Force Microscopy shows that the WO 3 thin layer has a nanostructure. The average surface roughness was 5.3 nm, and the Root Mean Square was 8.6 nm. The WO 3 film had the lowest resistivity value of 2.393 × 108  cm, and the activation energy was 0.298 eV, among the parameter of the current voltage at substrate temperature and concentration optimum.
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