{"title":"前驱体浓度对喷雾热解制备WO3薄膜结构、光学和电学性能的影响","authors":"Farhan Mohammed, E. Salim, A. Hassan, M. Wahid","doi":"10.53293/jasn.2022.4715.1139","DOIUrl":null,"url":null,"abstract":"Using a chemical spray technique, an n-type WO 3 polycrystalline thin film was prepared with optimizing parameters (molarity concentration of 80 mM and a substrate temperature of 350 °C). Study the physical properties of WO 3 thin film via UV-Visible spectroscopy, XRD, Field Emission-Scanning Electron Microscope, Energy Dispersive X-ray Spectroscopy, Atomic Force Microscopy, and current-voltage. Tungsten oxide was deposited on glass surfaces at different molarities ranging from 50–90mM. In the UV-Visible spectrum of the WO 3 thin film, it was found that the transmittance, reflectivity, and energy gap decreased (78%–53%), (9.63%–5.02%), and (3.40eV–2.63 eV), respectively. The X-ray diffraction of the WO 3 film at the optimized was poly-crystalline and had a monoclinic phase, and the preferred orientation (hkl) was 200 at 2 = 24.19. From the image FESEM and EDX, it was found that it has a multi-fibrous network. The average diameter of the fiber is 266 nm, and the ratio of tungsten to oxygen (W/O) is 2.6, with a stoichiometric of 68.6% at the 80 mM concentration. The Atomic Force Microscopy shows that the WO 3 thin layer has a nanostructure. The average surface roughness was 5.3 nm, and the Root Mean Square was 8.6 nm. The WO 3 film had the lowest resistivity value of 2.393 × 108 cm, and the activation energy was 0.298 eV, among the parameter of the current voltage at substrate temperature and concentration optimum.","PeriodicalId":15241,"journal":{"name":"Journal of Applied Sciences and Nanotechnology","volume":"49 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2022-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of Precursor Concentration on the Structural, Optical, and Electrical Properties of WO3 Thin Films Prepared by Spray Pyrolysis\",\"authors\":\"Farhan Mohammed, E. Salim, A. Hassan, M. Wahid\",\"doi\":\"10.53293/jasn.2022.4715.1139\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Using a chemical spray technique, an n-type WO 3 polycrystalline thin film was prepared with optimizing parameters (molarity concentration of 80 mM and a substrate temperature of 350 °C). Study the physical properties of WO 3 thin film via UV-Visible spectroscopy, XRD, Field Emission-Scanning Electron Microscope, Energy Dispersive X-ray Spectroscopy, Atomic Force Microscopy, and current-voltage. Tungsten oxide was deposited on glass surfaces at different molarities ranging from 50–90mM. In the UV-Visible spectrum of the WO 3 thin film, it was found that the transmittance, reflectivity, and energy gap decreased (78%–53%), (9.63%–5.02%), and (3.40eV–2.63 eV), respectively. The X-ray diffraction of the WO 3 film at the optimized was poly-crystalline and had a monoclinic phase, and the preferred orientation (hkl) was 200 at 2 = 24.19. From the image FESEM and EDX, it was found that it has a multi-fibrous network. The average diameter of the fiber is 266 nm, and the ratio of tungsten to oxygen (W/O) is 2.6, with a stoichiometric of 68.6% at the 80 mM concentration. The Atomic Force Microscopy shows that the WO 3 thin layer has a nanostructure. The average surface roughness was 5.3 nm, and the Root Mean Square was 8.6 nm. The WO 3 film had the lowest resistivity value of 2.393 × 108 cm, and the activation energy was 0.298 eV, among the parameter of the current voltage at substrate temperature and concentration optimum.\",\"PeriodicalId\":15241,\"journal\":{\"name\":\"Journal of Applied Sciences and Nanotechnology\",\"volume\":\"49 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2022-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Applied Sciences and Nanotechnology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.53293/jasn.2022.4715.1139\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Applied Sciences and Nanotechnology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.53293/jasn.2022.4715.1139","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Effect of Precursor Concentration on the Structural, Optical, and Electrical Properties of WO3 Thin Films Prepared by Spray Pyrolysis
Using a chemical spray technique, an n-type WO 3 polycrystalline thin film was prepared with optimizing parameters (molarity concentration of 80 mM and a substrate temperature of 350 °C). Study the physical properties of WO 3 thin film via UV-Visible spectroscopy, XRD, Field Emission-Scanning Electron Microscope, Energy Dispersive X-ray Spectroscopy, Atomic Force Microscopy, and current-voltage. Tungsten oxide was deposited on glass surfaces at different molarities ranging from 50–90mM. In the UV-Visible spectrum of the WO 3 thin film, it was found that the transmittance, reflectivity, and energy gap decreased (78%–53%), (9.63%–5.02%), and (3.40eV–2.63 eV), respectively. The X-ray diffraction of the WO 3 film at the optimized was poly-crystalline and had a monoclinic phase, and the preferred orientation (hkl) was 200 at 2 = 24.19. From the image FESEM and EDX, it was found that it has a multi-fibrous network. The average diameter of the fiber is 266 nm, and the ratio of tungsten to oxygen (W/O) is 2.6, with a stoichiometric of 68.6% at the 80 mM concentration. The Atomic Force Microscopy shows that the WO 3 thin layer has a nanostructure. The average surface roughness was 5.3 nm, and the Root Mean Square was 8.6 nm. The WO 3 film had the lowest resistivity value of 2.393 × 108 cm, and the activation energy was 0.298 eV, among the parameter of the current voltage at substrate temperature and concentration optimum.