K. Tsuji, K. Suemitsu, T. Mukai, K. Nagahara, H. Masubuchi, H. Utsumi, K. Kikuta
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0.1 /spl mu/m-rule MRAM development using double-layered hard mask
0.1 /spl mu/m rule magnetic random access memory (MRAM) was developed using double-layered hard mask of SiO/sub 2//metal. 30% magnetoresistance ratio under switching operation, read and write characteristics for MRAM cell with 0.1/spl times/0.6 /spl mu/m/sup 2/ were observed using current induced magnetic field. It is found that switching current of tunneling magnetoresistance (TMR) device with 0.1 /spl mu/m length can be reduced by thinning free layer and reduction of TMR aspect ratio.
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