高效超薄晶硅太阳能电池外延生长发射体的表面钝化

2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) Pub Date : 2016-06-05 DOI:10.1109/PVSC.2016.7750215

W. Yoon, Anthony Lochtefeld, N. Kotulak, D. Scheiman, A. Barnett, P. Jenkins, R. Walters

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引用次数: 6

摘要

在这项工作中，我们证明了通过用等离子体辅助原子层沉积(ALD) Al2O3/PECVD SiNx堆叠取代热SiO2作为不锈钢上16.8%效率的18 μm Si太阳能电池中p+发射极的钝化层，增强了外延生长的掺硼发射极的表面钝化。对于沉积后退火的外延p+-发射极上的Al2O3/SiNx堆，发射极饱和电流密度(J0e)值降至19.5 fA/cm2，相应的iVoc为688 mV。采用先进的表面钝化方案，可以进一步提高目前效率为16.8%的钢上超薄硅太阳电池的Voc。

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Enhanced surface passivation of epitaxially grown emitters for high-efficiency ultrathin crystalline Si solar cells

In this work, we demonstrated an enhanced surface passivation of epitaxially grown boron-doped emitters by replacing thermal SiO₂ as a passivation layer of p⁺-emitter employed in a 16.8% efficient 18-μm Si solar cell on stainless steel with plasma assisted atomic layer deposition (ALD) Al₂O₃/PECVD SiN_x stack. For the Al₂O₃/SiN_x stacks on epitaxial p⁺-emitter after post-deposition anneal, the emitter saturation current density (J_0e) values were decreased to 19.5 fA/cm² with the corresponding iV_oc of 688 mV By using advanced surface passivation scheme, further improvement in the V_oc of a present 16.8% efficient ultrathin Si solar cell on steel can be expected.

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2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC)

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