不同临时键合材料对通硅中间层(TSI)晶圆翘曲的影响

2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC) Pub Date : 2020-12-02 DOI:10.1109/EPTC50525.2020.9315102

W. Loh, K. Chui

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引用次数: 2

摘要

本文以两种不同类型的临时键合材料为参考，研究了通硅中间体(TSI)工艺流程中不同阶段晶圆翘曲的演变。对溶剂型和机械型脱粘剂进行了比较。TSI的制造包括4层Cu damascene (BEOL)金属，正面UBM，键合后背景磨削，TSV显示蚀刻和背面UBM。

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Wafer Warpage Evaluation of Through Si Interposer (TSI) with Different Temporary Bonding Materials

This paper investigate the evolution of wafer warpage at different stages of a Through Si interposer (TSI) process flow, with reference to 2 different types of temporary bonding material. Comparison was done between solvent based and mechanical based debonding adhesives. The TSI fabrication includes 4 layers Cu damascene (BEOL) metal, front-side UBM, post-bonding backgrinding, TSV reveal etch and backside UBM.

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来源期刊

2020 IEEE 22nd Electronics Packaging Technology Conference (EPTC)

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