多孔NiO-ZrO2衬底上EBPVD氧化锆膜的成核及生长机理研究

2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI:10.1109/OMEE.2012.6464786

O. Vasylyev, M. Brychevskyi, I. Brodnikovskyi, L. Dubykivskyi, M. Andrzejczuk, M. Spychalski, M. Lewandowska, K. Kurzydłowski, R. Steinberger‐Wilckens, J. Mertens, J. Malzbender

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引用次数: 0

摘要

研究了阳极-电解质界面(AEI)的薄结构，建立了电子束物理气相沉积(EB-PVD)的成核和生长机制。ZrO2的凝析有两种机制:平面凝析和细胞凝析。ZrO2在ZrO2相和NiO相上的缩合有两种不同的途径。在ZrO2相上，形成“缺陷层接缺陷层”的平面生长层。在NiO上，层从沉积过程的一开始就是细胞状的。平面生长层是“一层接一层密”形成的。沉积影响带(DAZ)明显区分。

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On nucleation and growth mechanisms of EBPVD zirconia films on porous NiO-ZrO2 substrate

Thin structure of the anode-electrolyte interface (AEI) was studied, and plausible nucleation and growth mechanisms at electron-beam physical vapor deposition (EB-PVD) were established. ZrO2 condensates with two mechanisms - planar and cellular ones like it happens at solidification from liquid phase. ZrO2 condensation on ZrO2 and NiO phases occurs with two different routes. On ZrO2 phase, layer of planar growth is formed with “defective layer by defective layer” mechanism. On NiO, the layer is cellular from the very beginning of the deposition process. The layer of planar growth is formed as “dense layer by dense layer”. Deposition affected zone (DAZ) is clearly distinguished.

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2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)

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