H. Fujiwara, Yuta Sato, N. Saito, Tomomasa Ueda, K. Ikeda
{"title":"采用与BEOL兼容的高耐热铝锌氧化物沟道制备栅极长度为40 nm的环栅垂直沟道场效应管","authors":"H. Fujiwara, Yuta Sato, N. Saito, Tomomasa Ueda, K. Ikeda","doi":"10.1109/VLSITechnology18217.2020.9265109","DOIUrl":null,"url":null,"abstract":"We have demonstrated, for the first time, a surrounding gate vertical-channel FET with gate length of 40 nm by introducing back-end-of-line (BEOL) process compatible novel oxide semiconductor (OS) In-Al-Zn-O as a channel material. Fabricated FETs exhibited high scalability by excellent thermal stability (~ 420°C) compared to conventional In-Ga-Zn-O-channel FETs, with high mobility (12.7 cm2/Vs) characteristics. Furthermore, the vertical-channel FET also exhibited excellent reliability and stable operation without floating body effect. Endurance of over 1011 cycles was also demonstrated. Our work opens a pathway to realization of high-performance BEOL transistor for 3D-LSI applications.","PeriodicalId":6850,"journal":{"name":"2020 IEEE Symposium on VLSI Technology","volume":"14 1","pages":"1-2"},"PeriodicalIF":0.0000,"publicationDate":"2020-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm Using BEOL Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel\",\"authors\":\"H. Fujiwara, Yuta Sato, N. Saito, Tomomasa Ueda, K. Ikeda\",\"doi\":\"10.1109/VLSITechnology18217.2020.9265109\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have demonstrated, for the first time, a surrounding gate vertical-channel FET with gate length of 40 nm by introducing back-end-of-line (BEOL) process compatible novel oxide semiconductor (OS) In-Al-Zn-O as a channel material. Fabricated FETs exhibited high scalability by excellent thermal stability (~ 420°C) compared to conventional In-Ga-Zn-O-channel FETs, with high mobility (12.7 cm2/Vs) characteristics. Furthermore, the vertical-channel FET also exhibited excellent reliability and stable operation without floating body effect. Endurance of over 1011 cycles was also demonstrated. Our work opens a pathway to realization of high-performance BEOL transistor for 3D-LSI applications.\",\"PeriodicalId\":6850,\"journal\":{\"name\":\"2020 IEEE Symposium on VLSI Technology\",\"volume\":\"14 1\",\"pages\":\"1-2\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2020 IEEE Symposium on VLSI Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSITechnology18217.2020.9265109\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSITechnology18217.2020.9265109","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
摘要
我们首次通过引入与后端线(BEOL)工艺兼容的新型氧化物半导体In-Al-Zn-O作为通道材料，展示了栅极长度为40 nm的环栅垂直沟道FET。与传统的in - ga - zn - o沟道fet相比，制备的fet具有优异的热稳定性(~ 420°C)，具有高迁移率(12.7 cm2/Vs)。此外，垂直沟道场效应管也表现出良好的可靠性和稳定的运行，无浮体效应。耐久性也超过1011次循环。我们的工作为实现3D-LSI应用的高性能BEOL晶体管开辟了一条途径。
Surrounding Gate Vertical-Channel FET with Gate Length of 40 nm Using BEOL Compatible High-Thermal-Tolerance In-Al-Zn Oxide Channel
We have demonstrated, for the first time, a surrounding gate vertical-channel FET with gate length of 40 nm by introducing back-end-of-line (BEOL) process compatible novel oxide semiconductor (OS) In-Al-Zn-O as a channel material. Fabricated FETs exhibited high scalability by excellent thermal stability (~ 420°C) compared to conventional In-Ga-Zn-O-channel FETs, with high mobility (12.7 cm2/Vs) characteristics. Furthermore, the vertical-channel FET also exhibited excellent reliability and stable operation without floating body effect. Endurance of over 1011 cycles was also demonstrated. Our work opens a pathway to realization of high-performance BEOL transistor for 3D-LSI applications.
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