{"title":"60 V击穿电压的分栅沟槽mosfet结构优化与小型化","authors":"Yuji Lee, Jyh-Ling Lin","doi":"10.1016/j.ssel.2020.01.004","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":101175,"journal":{"name":"Solid State Electronics Letters","volume":"524 1","pages":"23-27"},"PeriodicalIF":0.0000,"publicationDate":"2020-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Structural optimization and miniaturization for Split-Gate Trench MOSFETs with 60 V breakdown voltage\",\"authors\":\"Yuji Lee, Jyh-Ling Lin\",\"doi\":\"10.1016/j.ssel.2020.01.004\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":101175,\"journal\":{\"name\":\"Solid State Electronics Letters\",\"volume\":\"524 1\",\"pages\":\"23-27\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2020-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid State Electronics Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1016/j.ssel.2020.01.004\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid State Electronics Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1016/j.ssel.2020.01.004","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}