用于高性能计算的7级堆叠纳米片GAA晶体管

2020 IEEE Symposium on VLSI Technology Pub Date : 2020-06-01 DOI:10.1109/VLSITechnology18217.2020.9265025

S. Barraud, B. Previtali, C. Vizioz, J. Hartmann, J. Sturm, J. Lassarre, C. Perrot, P. Rodriguez, V. Loup, A. Magalhaes-Lucas, R. Kies, G. Romano, M. Cassé, N. Bernier, A. Jannaud, A. Grenier, F. Andrieu

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引用次数: 40

摘要

在本文中，我们首次通过实验证明了具有创纪录数量堆叠通道的栅极全能(GAA)纳米片晶体管。采用替代金属栅极工艺、内间隔和自排列触点制备的7级堆叠纳米片GAA晶体管具有优异的栅极可控性，具有极高的电流驱动性$(3\ mathm {mA}/\mu \ mathm {m}\ \ mathm {at}\ \ mathm {V}_{\ mathm {DD}}=1\ mathm {V})$，漏极电流比通常的2级堆叠- NS GAA晶体管提高了3倍。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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7-Levels-Stacked Nanosheet GAA Transistors for High Performance Computing

In this paper, we experimentally demonstrate, for the first time, gate-all-around (GAA) nanosheet transistors with a record number of stacked channels. Seven levels stacked nanosheet (NS) GAA transistors fabricated using a replacement metal gate process, inner spacer and self-aligned contacts show an excellent gate controllability with extremely high current drivability $(3\mathrm{mA}/\mu \mathrm{m}\ \mathrm{at}\ \mathrm{V}_{\mathrm{DD}}=1\mathrm{V})$ and a 3 x improvement in drain current over usual 2 levels stacked- NS GAA transistors.

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2020 IEEE Symposium on VLSI Technology

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