G. Giustolisi, G. Palumbo, P. Finocchiaro, A. Pappalardo
{"title":"verilog -硅光电倍增器的模型","authors":"G. Giustolisi, G. Palumbo, P. Finocchiaro, A. Pappalardo","doi":"10.1109/ISCAS.2016.7527479","DOIUrl":null,"url":null,"abstract":"The Silicon Photomultiplier (SiPM) is a promising kind of device able to detect single photons thus permitting the measurement of weak optical signals. The design of high-performance front-end electronics for the read-out, require an accurate model of the SiPM. In this paper we propose a new SiPM model implemented through the behavioral language Verilog-a and suitable for transistor-level circuit simulation. The model is based on a traditional electrical model and a statistical modeling to implement the SiPM noise characteristic in terms of dark-count and after-pulsing phenomena. We also provide a procedure for extracting the model parameters from measurements and validate both the extraction procedure and the Verilog-a model by comparing simulations to measurement results.","PeriodicalId":6546,"journal":{"name":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","volume":"6 1","pages":"1270-1273"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Verilog-a modeling of Silicon Photo-Multipliers\",\"authors\":\"G. Giustolisi, G. Palumbo, P. Finocchiaro, A. Pappalardo\",\"doi\":\"10.1109/ISCAS.2016.7527479\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Silicon Photomultiplier (SiPM) is a promising kind of device able to detect single photons thus permitting the measurement of weak optical signals. The design of high-performance front-end electronics for the read-out, require an accurate model of the SiPM. In this paper we propose a new SiPM model implemented through the behavioral language Verilog-a and suitable for transistor-level circuit simulation. The model is based on a traditional electrical model and a statistical modeling to implement the SiPM noise characteristic in terms of dark-count and after-pulsing phenomena. We also provide a procedure for extracting the model parameters from measurements and validate both the extraction procedure and the Verilog-a model by comparing simulations to measurement results.\",\"PeriodicalId\":6546,\"journal\":{\"name\":\"2016 IEEE International Symposium on Circuits and Systems (ISCAS)\",\"volume\":\"6 1\",\"pages\":\"1270-1273\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2016-05-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2016 IEEE International Symposium on Circuits and Systems (ISCAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAS.2016.7527479\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Symposium on Circuits and Systems (ISCAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISCAS.2016.7527479","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Silicon Photomultiplier (SiPM) is a promising kind of device able to detect single photons thus permitting the measurement of weak optical signals. The design of high-performance front-end electronics for the read-out, require an accurate model of the SiPM. In this paper we propose a new SiPM model implemented through the behavioral language Verilog-a and suitable for transistor-level circuit simulation. The model is based on a traditional electrical model and a statistical modeling to implement the SiPM noise characteristic in terms of dark-count and after-pulsing phenomena. We also provide a procedure for extracting the model parameters from measurements and validate both the extraction procedure and the Verilog-a model by comparing simulations to measurement results.