{"title":"在非碱玻璃基板上的高性能单晶硅tft","authors":"Y. Sano, M. Takei, A. Hara, N. Sasaki","doi":"10.1109/IEDM.2002.1175904","DOIUrl":null,"url":null,"abstract":"A new single-crystal silicon growth method for fabricating high-performance thin-film transistors (TFTs) was developed. High-performance TFTs - with an 8-/spl mu/m-wide and 20-/spl mu/m-long single-crystal silicon region and a field-effect mobility of 580 cm/sup 2//Vs for the n-channel and 330 cm/sup 2//Vs for the p-channel - were fabricated below 450/spl deg/C on a 300/spl times/300 mm/sup 2/ non-alkali glass substrate.","PeriodicalId":74909,"journal":{"name":"Technical digest. International Electron Devices Meeting","volume":"24 1","pages":"565-568"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"High-performance single-crystalline-silicon TFTs on a non-alkali glass substrate\",\"authors\":\"Y. Sano, M. Takei, A. Hara, N. Sasaki\",\"doi\":\"10.1109/IEDM.2002.1175904\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new single-crystal silicon growth method for fabricating high-performance thin-film transistors (TFTs) was developed. High-performance TFTs - with an 8-/spl mu/m-wide and 20-/spl mu/m-long single-crystal silicon region and a field-effect mobility of 580 cm/sup 2//Vs for the n-channel and 330 cm/sup 2//Vs for the p-channel - were fabricated below 450/spl deg/C on a 300/spl times/300 mm/sup 2/ non-alkali glass substrate.\",\"PeriodicalId\":74909,\"journal\":{\"name\":\"Technical digest. International Electron Devices Meeting\",\"volume\":\"24 1\",\"pages\":\"565-568\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Technical digest. International Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2002.1175904\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Technical digest. International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2002.1175904","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
High-performance single-crystalline-silicon TFTs on a non-alkali glass substrate
A new single-crystal silicon growth method for fabricating high-performance thin-film transistors (TFTs) was developed. High-performance TFTs - with an 8-/spl mu/m-wide and 20-/spl mu/m-long single-crystal silicon region and a field-effect mobility of 580 cm/sup 2//Vs for the n-channel and 330 cm/sup 2//Vs for the p-channel - were fabricated below 450/spl deg/C on a 300/spl times/300 mm/sup 2/ non-alkali glass substrate.
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