碲化mosfet的晶圆尺度材料-器件相关性

2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP) Pub Date : 2018-07-01 DOI:10.1109/IMWS-AMP.2018.8457151

K. Xiong, Lei Li, Roderick J. Marstell, A. Madjar, N. Strandwitz, J. Hwang, G. Qiu, Yixiu Wang, Wenzhuo Wu, P. Ye, A. Göritz, M. Wietstruck, M. Kaynak

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引用次数: 2

摘要

首次采用cmos兼容晶圆工艺批量制造了数千个碲化mosfet。但产率仅为1%左右，主要原因是碲的不均匀和不连续。然而，大规模的材料-器件相关性证实，碲越厚，电流容量越大，但通断比越低。这种大规模的材料/器件相关可以帮助在未来改进材料和器件。

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Wafer-scale Material-device Correlation of Tellurene MOSFETs

For the first time, thousands of tellurene MOSFETs were batch-fabricated by a CMOS-compatible wafer process. However, the yield was only approximately 1% mainly because the tellurene was nonuniform and discontinuous. Nevertheless, the large-scale material-device correlation confirmed that the thicker the tellurene, the higher the current capacity, but the lower the on/off ratio. Such large-scale material/device correlation can help improve both the material and the device in the future.

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2018 IEEE MTT-S International Microwave Workshop Series on Advanced Materials and Processes for RF and THz Applications (IMWS-AMP)

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