{"title":"在标准CMOS技术中改进的电压倍频器","authors":"P. Favrat, P. Deval, M. Declercq","doi":"10.1109/ISCAS.1997.608688","DOIUrl":null,"url":null,"abstract":"A charge pump cell is used to make a voltage doubler using improved serial switches. The PMOS transistor used for the serial switch is analyzed and a model ready for simulation is described. The importance of capacitors is shown with plots of efficiency versus load and stray capacitors. Several optimizations and problems arising at low voltage or high frequency are presented. The substrate current is totally suppressed by the technique of bulk commutation. The real efficiency, when all optimizations are implemented, approaches 80%.","PeriodicalId":68559,"journal":{"name":"电路与系统学报","volume":"4 1","pages":"249-252 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1997-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":"{\"title\":\"An improved voltage doubler in a standard CMOS technology\",\"authors\":\"P. Favrat, P. Deval, M. Declercq\",\"doi\":\"10.1109/ISCAS.1997.608688\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A charge pump cell is used to make a voltage doubler using improved serial switches. The PMOS transistor used for the serial switch is analyzed and a model ready for simulation is described. The importance of capacitors is shown with plots of efficiency versus load and stray capacitors. Several optimizations and problems arising at low voltage or high frequency are presented. The substrate current is totally suppressed by the technique of bulk commutation. The real efficiency, when all optimizations are implemented, approaches 80%.\",\"PeriodicalId\":68559,\"journal\":{\"name\":\"电路与系统学报\",\"volume\":\"4 1\",\"pages\":\"249-252 vol.1\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-06-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"20\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"电路与系统学报\",\"FirstCategoryId\":\"1093\",\"ListUrlMain\":\"https://doi.org/10.1109/ISCAS.1997.608688\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"电路与系统学报","FirstCategoryId":"1093","ListUrlMain":"https://doi.org/10.1109/ISCAS.1997.608688","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
An improved voltage doubler in a standard CMOS technology
A charge pump cell is used to make a voltage doubler using improved serial switches. The PMOS transistor used for the serial switch is analyzed and a model ready for simulation is described. The importance of capacitors is shown with plots of efficiency versus load and stray capacitors. Several optimizations and problems arising at low voltage or high frequency are presented. The substrate current is totally suppressed by the technique of bulk commutation. The real efficiency, when all optimizations are implemented, approaches 80%.
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