量子点的金属有机气相外延

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-11-12 DOI:10.1109/LEOS.2001.968938

J. Coleman, T. Yeoh

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引用次数: 0

摘要

提出了一种利用底层InGaAs实现InAs量子点无掩膜选择性区域外延的方法。利用标准光刻技术，在In/sub 0.20/Ga/sub 0.80/As层上实现了量子点的选择性面积外延，量子点密度超过3/spl倍/10/sup 10/ cm/sup 2/。该方法的优点在于缺乏氧化物或氮化物掩膜材料，允许单一的再生过程，不需要任何额外的热剂量或生长速率增强。

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Metalorganic vapor phase epitaxy of quantum dots

A method of maskless selective area epitaxy of InAs quantum dots using underlying InGaAs is presented. By using standard lithography techniques, selective area epitaxy of quantum dots was achieved on In/sub 0.20/Ga/sub 0.80/As layers with a QD density exceeding 3/spl times/10/sup 10/ cm/sup 2/. The advantage of this method lies in the lack of oxide or nitride mask material, allowing for a single regrowth process that is not complicated by any additional thermal dose or growth rate enhancement.

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LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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