AlGaN/GaN异质结构的二维电子气体(2DEG) IDT SAW器件

2007 7th IEEE Conference on Nanotechnology (IEEE NANO) Pub Date : 2007-08-01 DOI:10.1109/NANO.2007.4601361

King-yuen Wong, W. Tang, K. Lau, K.J. Chen

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引用次数: 0

摘要

利用基于氟基(CF4)等离子体处理技术的平面隔离技术，在AlGaN/GaN异质结构上展示了使用二维电子气(2DEG)作为数字间换能器(IDTs)的表面声波(SAW)器件。比较了采用平面2DEG idt的SAW滤波器与采用金属idt或混合金属/2DEG idt的SAW器件的射频特性。

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Two-dimensional electron gas (2DEG) IDT SAW devices on AlGaN/GaN heterostructure

Surface acoustic wave (SAW) devices using two-dimensional electron gas (2DEG) as interdigital transducers (IDTs) on AlGaN/GaN heterostructure has been demonstrated using a planar isolation technique based on the fluoride-based (CF4) plasma treatment technique. The RF characteristics of the SAW filters with planar 2DEG IDTs are compared with SAW devices that are made of metal IDTs or hybrid metal/2DEG IDTs.

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2007 7th IEEE Conference on Nanotechnology (IEEE NANO)

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