0.1 μ m n- mosfet中的低频噪声和量子输运

International Electron Devices Meeting 1991 [Technical Digest] Pub Date : 1991-12-08 DOI:10.1109/IEDM.1991.235378

Z.M. Shi, J. Miéville, J. Barrier, M. Dutoit

{"title":"0.1 μ m n- mosfet中的低频噪声和量子输运","authors":"Z.M. Shi, J. Miéville, J. Barrier, M. Dutoit","doi":"10.1109/IEDM.1991.235378","DOIUrl":null,"url":null,"abstract":"Random telegraph signals (RTS) produced in deep-submicron n-MOSFETs by single electron capture and emission on oxide traps ar studied. Trap parameters, energy level, spatial location, and activation energies are derived. For temperatures lower than 20 K, the static transistor characteristics show evidence of resonant tunneling and variable range hopping mediated by localized states in the channel. When resonant tunneling dominates the transport, no RTS is measurable and a new type of low frequency current fluctuations is observed.<<ETX>>","PeriodicalId":13885,"journal":{"name":"International Electron Devices Meeting 1991 [Technical Digest]","volume":"267 1","pages":"363-366"},"PeriodicalIF":0.0000,"publicationDate":"1991-12-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low frequency noise and quantum transport in 0.1 mu m n-MOSFETs\",\"authors\":\"Z.M. Shi, J. Miéville, J. Barrier, M. Dutoit\",\"doi\":\"10.1109/IEDM.1991.235378\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Random telegraph signals (RTS) produced in deep-submicron n-MOSFETs by single electron capture and emission on oxide traps ar studied. Trap parameters, energy level, spatial location, and activation energies are derived. For temperatures lower than 20 K, the static transistor characteristics show evidence of resonant tunneling and variable range hopping mediated by localized states in the channel. When resonant tunneling dominates the transport, no RTS is measurable and a new type of low frequency current fluctuations is observed.<<ETX>>\",\"PeriodicalId\":13885,\"journal\":{\"name\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"volume\":\"267 1\",\"pages\":\"363-366\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1991-12-08\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 1991 [Technical Digest]\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1991.235378\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 1991 [Technical Digest]","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1991.235378","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

研究了深亚微米n- mosfet中单电子捕获和氧化阱发射产生的随机电报信号(RTS)。导出了陷阱参数、能级、空间位置和活化能。当温度低于20 K时，静态晶体管的特性显示出谐振隧道效应和由沟道中的局域态介导的可变范围跳变。当共振隧穿主导输运时，没有可测量的RTS，并且观察到一种新的低频电流波动。

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Low frequency noise and quantum transport in 0.1 mu m n-MOSFETs

Random telegraph signals (RTS) produced in deep-submicron n-MOSFETs by single electron capture and emission on oxide traps ar studied. Trap parameters, energy level, spatial location, and activation energies are derived. For temperatures lower than 20 K, the static transistor characteristics show evidence of resonant tunneling and variable range hopping mediated by localized states in the channel. When resonant tunneling dominates the transport, no RTS is measurable and a new type of low frequency current fluctuations is observed.<>

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International Electron Devices Meeting 1991 [Technical Digest]

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