三维嵌入式去耦电容器的宽带可扩展建模

H. Jacquinot, D. Denis
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引用次数: 4

摘要

针对IPDIA公司生产的三维高密度沟槽去耦电容器,提出了LETI开发的扩展宽带物理可扩展模型。电容器的密度为80nf /mm2,并嵌入在高电阻硅衬底中。将这种电容器用于混合电路解耦和滤波应用需要宽带SPICE模型。因此,提高模型在低频段和高频段的有效范围是研究的重点。本文提出了一种新的三维沟槽去耦电容R, L, C电路拓扑结构,包括频率范围从10khz到10ghz的互连。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Wide frequency band scalable modeling of 3D embedded decoupling capacitors
This paper presents an extended wide-band physical scalable model developed at LETI for 3D high density trench decoupling capacitors manufactured by IPDIA. The capacitors provide a density of 80 nF/mm2 and are embedded in a high resistivity silicon substrate. Use of such capacitors for mixed circuits decoupling and filtering applications requires wide-band SPICE models. Therefore, a focus is done on improving the model frequency validity range in the low and high frequency bands. This paper proposes a new 3D trench decoupling capacitor R, L, C circuit topology including interconnects with a frequency range from 10 kHz up to 10 GHz.
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