Ag/HfO2/ZnO/TiAu结构的电物理诊断

2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE) Pub Date : 2012-09-01 DOI:10.1109/OMEE.2012.6464855

T. Krajewski, P. Smertenko, G. Luka, L. Wachnicki, A. Cherevko, G. Olkhovik, A. Zakrzewski, M. Godlewski, E. Guziewicz

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摘要

本文报道了Ag/HfO2/ZnO/TiAu Schottky结构，其中采用低温原子层沉积(ALD)方法获得了半导体ZnO和HfO2层。通过热离子发射、差分和注入等方法，确定了zno基二极管的最佳复盖层厚度为2.5 nm左右。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Electrophysical diagnostics of Ag/HfO2/ZnO/TiAu structures

This paper reports on the Ag/HfO2/ZnO/TiAu Schottky structures, in which the semiconducting ZnO and HfO2 layers are obtained using the low temperature Atomic Layer Deposition (ALD) method. Basing on the thermionic emission, differential and injection approaches an optimal thickness of HfO2 capping layer for the ZnO-based diode was found to be about 2.5 nm.

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2012 IEEE International Conference on Oxide Materials for Electronic Engineering (OMEE)

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