F. Pintacuda, S. Massett, E. Vitanza, M. Muschitiello, V. Cantarella
{"title":"SiC Mosfet的SEGR和pig失效分析","authors":"F. Pintacuda, S. Massett, E. Vitanza, M. Muschitiello, V. Cantarella","doi":"10.1109/ESPC.2019.8931999","DOIUrl":null,"url":null,"abstract":"This paper report the Failure Analysis results performed on SiC Mosfet with SEGR and PIGS failure after SEE test. The analysis discovered a hot spot in the SiC junction at the SEGR fail point.","PeriodicalId":6734,"journal":{"name":"2019 European Space Power Conference (ESPC)","volume":"14 4 1","pages":"1-5"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"SEGR and PIGS Failure Analysis of SiC Mosfet\",\"authors\":\"F. Pintacuda, S. Massett, E. Vitanza, M. Muschitiello, V. Cantarella\",\"doi\":\"10.1109/ESPC.2019.8931999\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper report the Failure Analysis results performed on SiC Mosfet with SEGR and PIGS failure after SEE test. The analysis discovered a hot spot in the SiC junction at the SEGR fail point.\",\"PeriodicalId\":6734,\"journal\":{\"name\":\"2019 European Space Power Conference (ESPC)\",\"volume\":\"14 4 1\",\"pages\":\"1-5\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 European Space Power Conference (ESPC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ESPC.2019.8931999\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 European Space Power Conference (ESPC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ESPC.2019.8931999","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
This paper report the Failure Analysis results performed on SiC Mosfet with SEGR and PIGS failure after SEE test. The analysis discovered a hot spot in the SiC junction at the SEGR fail point.