用于性能优化的堆叠硅纳米片场效应管的NEGF模拟

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870365

Hong-hyun Park, W. Choi, M. A. Pourghaderi, Jongchol Kim, U. Kwon, D. Kim

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引用次数: 7

摘要

本文给出了堆叠硅纳米片非场效应管的量子输运模拟结果。我们的模拟基于非平衡格林函数(NEGF)方法，该方法能够处理复杂形状器件中稳态电子传递所需的所有主要物理效应。为了帮助找到最佳的器件设计，进行了许多不同几何形状和工艺条件下的分裂模拟作为论证。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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NEGF simulations of stacked silicon nanosheet FETs for performance optimization

We present quantum transport simulation results of stacked silicon nanosheet (SiNS) nFETs. Our simulations are based on the non-equilibrium Green’s function (NEGF) method which is capable of dealing with all major physical effects necessary for steady-state electron transport in the complex-shaped devices. In order to help find optimal device design many split simulations for various geometry and process conditions were performed as a demonstration.

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来源期刊

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

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