退火温度对SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT)薄膜形成的影响

ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics Pub Date : 1996-08-18 DOI:10.1109/ISAF.1996.598055

D. Ravichandran, K. Yamakawa, R. Roy, A. Bhalla, S. Trolier-McKinstry, R. Guo, L. Cross

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引用次数: 0

摘要

本文报道了溶胶-凝胶法制备SBT薄膜。以金属锶、铋、己酸2-乙酯和乙酸乙酯为前驱体。制备了标称成分为SrBi/sub 2/Ta/sub 2/O/sub 9/和SBT +10%过量Bi的薄膜。在不同温度下对薄膜进行退火，研究薄膜的微观结构、结晶温度和极化值。在700/spl度/C-2小时的退火条件下，薄膜中铋的含量无关，获得了良好的SBT结晶。在800/spl度/C-2小时的氧气气氛中退火后，薄膜的极化值没有明显变化。制备无裂纹薄膜，膜厚0.4 /spl mu/m。在800/spl℃/C-2 h退火后，薄膜的晶粒尺寸为/spl sim/0.2 /spl mu/m，极化值为5 /spl mu/C/cm/sup 2/。相比之下，添加10%铋制备的薄膜晶粒尺寸<0.1 /spl mu/m，极化值较低，为1.5 /spl mu/C/cm/sup 2/。

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The effect of annealing temperature on the formation of SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) thin films

In this paper we report on synthesis of SBT thin-films by sol-gel processing. Sr metal, Bi, 2-ethyl hexanoate and Ta-ethoxide were used as precursors. Thin-films with nominal composition SrBi/sub 2/Ta/sub 2/O/sub 9/ and SBT +10% excess Bi content were made. Films were annealed at various temperatures to study the microstructure, crystallization temperature and the polarization values. Good crystallization of SBT was obtained by annealing at 700/spl deg/C-2 hrs, independent of the Bi content in the films. Films annealed in oxygen atmosphere at 800/spl deg/C-2 hrs did not show any significant change in the polarization value. Crack free films were made with film thicknesses of 0.4 /spl mu/m. Films annealed at 800/spl deg/C-2 hrs showed a grain size of /spl sim/0.2 /spl mu/m, and reasonably good polarization values of 5 /spl mu/C/cm/sup 2/. In contrast, films prepared with 10% excess Bi showed a very fine grain size <0.1 /spl mu/m with a lower polarization values of 1.5 /spl mu/C/cm/sup 2/.

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ISAF '96. Proceedings of the Tenth IEEE International Symposium on Applications of Ferroelectrics

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