用于量子计算的硅CMOS器件建模

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Pub Date : 2019-09-01 DOI:10.1109/SISPAD.2019.8870477

B. Venitucci, Jing Li, L. Bourdet, Y. Niquet

{"title":"用于量子计算的硅CMOS器件建模","authors":"B. Venitucci, Jing Li, L. Bourdet, Y. Niquet","doi":"10.1109/SISPAD.2019.8870477","DOIUrl":null,"url":null,"abstract":"We review our recent results on the modeling of silicon spin qubits. We describe, in particular, the methodology we have set-up for the simulation of these devices, and give some illustrations on silicon-on-insulator (SOI) qubits. We discuss, in particular, the electrical manipulation of electron and hole spins.","PeriodicalId":6755,"journal":{"name":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","volume":"525 1","pages":"1-4"},"PeriodicalIF":0.0000,"publicationDate":"2019-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Modeling Silicon CMOS devices for quantum computing\",\"authors\":\"B. Venitucci, Jing Li, L. Bourdet, Y. Niquet\",\"doi\":\"10.1109/SISPAD.2019.8870477\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We review our recent results on the modeling of silicon spin qubits. We describe, in particular, the methodology we have set-up for the simulation of these devices, and give some illustrations on silicon-on-insulator (SOI) qubits. We discuss, in particular, the electrical manipulation of electron and hole spins.\",\"PeriodicalId\":6755,\"journal\":{\"name\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"volume\":\"525 1\",\"pages\":\"1-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SISPAD.2019.8870477\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SISPAD.2019.8870477","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 3

摘要

我们回顾了硅自旋量子比特建模的最新成果。我们特别描述了我们为模拟这些器件而建立的方法，并给出了一些关于绝缘体上硅(SOI)量子比特的说明。我们特别讨论了电子和空穴自旋的电操纵。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Modeling Silicon CMOS devices for quantum computing

We review our recent results on the modeling of silicon spin qubits. We describe, in particular, the methodology we have set-up for the simulation of these devices, and give some illustrations on silicon-on-insulator (SOI) qubits. We discuss, in particular, the electrical manipulation of electron and hole spins.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2019 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)

自引率

0.00%

发文量