高效率，10ghz带宽谐振腔增强硅光电探测器工作在850nm波长

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-11-12 DOI:10.1109/LEOS.2001.969077

M. Emsley, O. Dosunmu, M. Unlu

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引用次数: 2

摘要

采用双soi技术制备了埋地分布Bragg反射器，在850 nm处量子效率为/spl sim/40%，带宽为/spl sim/10 GHz的RCE Si引脚光电探测器。该反射晶片具有商业可重复性，并且具有单晶硅器件层，用于制造具有高带宽效率和低暗电流的硅RCE光电二极管。这些晶圆非常适合VLSI集成，并与标准CMOS处理兼容，使其成为接收器电路与光电探测器单片集成的理想选择。

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High-efficiency, 10 GHz bandwidth resonant-cavity-enhanced silicon photodetectors operating at 850 nm wavelength

We present RCE Si pin photodetectors capable of quantum efficiency of /spl sim/40% and bandwidth of /spl sim/10 GHz at 850 nm with a buried distributed Bragg reflector fabricated by means of a double-SOI technique. The reflecting wafers are commercially reproducible and have single crystalline silicon device layers for fabricating silicon RCE photodiodes with high bandwidth efficiencies as well as low dark current. These wafers are well suited for VLSI integration and are compatible with standard CMOS processing making them ideal for monolithic integration of receiver circuits with photodetectors.

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LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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