用于高级互连金属化的铝化物金属间化合物:薄膜研究

J. Soulie, Z. Tokei, J. Swerts, C. Adelmann
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引用次数: 9

摘要

AlNi, Al3Sc, AlCu和Al2Cu薄膜已被研究作为互连金属化方案中Cu的潜在替代品。56 nm厚度的NiAl薄膜经600℃沉积后退火后,其电阻率为13.9 μΩ cm。测试了不同的封井层,以克服氧化物顶层的形成。沉积后退火500℃(24 nm厚薄膜)后,Al3Sc的电阻率为12.5 μΩ cm。AlCu和Al2Cu薄膜在20nm及以上的厚度上优于Ru薄膜(28nm薄膜为9.5 μΩ cm)。讨论了挑战和集成的可行性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Aluminide intermetallics for advanced interconnect metallization: thin film studies
AlNi, Al3Sc, AlCu, and Al2Cu thin films have been investigated as potential alternatives for Cu in interconnect metallization schemes. Stoichiometric NiAl thin films of 56 nm thickness show a resistivity of 13.9 μΩ cm after post-deposition annealing at 600°C. Different capping layers were tested to overcome the formation of an oxide top layer. Al3Sc presents a resistivity of 12.5 μΩ cm after post-deposition annealing at 500°C (for 24 nm thick films). AlCu and Al2Cu outperform Ru films at 20 nm thickness and above (9.5 μΩ cm for 28 nm films). Challenges and integration feasibility are discussed.
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