集成在220nm硅光子学平台上的o波段GeSi量子限制Stark效应电吸收调制器

2020 IEEE Symposium on VLSI Technology Pub Date : 2020-06-01 DOI:10.1109/VLSITechnology18217.2020.9265082

C. Porret, S. Srinivasan, S. Balakrishnan, P. Verheyen, P. Favia, H. Bender, P. Ong, R. Loo, J. Van Campenhout, M. Pantouvaki

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引用次数: 2

摘要

本文报道了一种集成在220nm硅光子学平台上的波导耦合量子限制斯塔克效应(QCSE)电吸收调制器，其工作波长范围为1335-1365nm。该器件基于应变平衡GeSi量子阱/势垒堆栈，生长在超薄应变松弛缓冲层上。堆叠厚度仅为450nm，有利于与亚微米硅波导的光耦合。在一个$40\mu \math {m}$长的器件中，在1 Vpp驱动电压下实现了高达8dB的消光比，证明了该调制器在低功耗光互连应用中的潜力。

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O-band GeSi quantum-confined Stark effect electro-absorption modulator integrated in a 220nm silicon photonics platform

We report on a waveguide-coupled quantum-confined Stark effect (QCSE) electro-absorption modulator integrated in a 220nm Si photonics platform and operating in 1335-1365nm wavelength range. The device is based on a strain -balanced GeSi quantum well / barrier stack grown on an ultra-thin strain-relaxed buffer. The stack is only 450nm thick, facilitating optical coupling to sub-micron Si waveguides. An extinction ratio up to 8dB is achieved in a $40\mu \mathrm{m}$ long device for a 1 Vpp drive voltage, demonstrating the potential of this modulator for low-power optical interconnect applications.

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2020 IEEE Symposium on VLSI Technology

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