PLD沉积CZTS薄膜的组成-比例控制

M. Kotani, H. Miura, Y. Shim, K. Wakita
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引用次数: 5

摘要

研究了对CZTS多晶组成的控制。将CZTS多晶、ZnS和SnS粉末混合调整成分,在400℃下烧结。我们以Cu/(Zn+Sn) = 0.79, Zn/Sn = 1.04, S/(Cu+Zn+Sn) = 0.95的摩尔比评价多晶。然后,以CZTS多晶为靶,采用PLD法制备了CZTS薄膜。薄膜成分含量为Cu/(Zn+Sn) = 1.14, Zn/Sn = 1.04, S/(Cu+Zn+Sn) = 0.69。膜中cu含量略富,s含量略差,Zn/Sn比值没有变化。此外,我们还成功地以CZTS、ZnS和SnS为原料进行了成分控制和成分均匀性的改善。此外,我们还利用PLD方法制备了具有kesterite或stannite结构的均匀CZTS薄膜。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Composition‐ratio control of CZTS films deposited by PLD
The control of the composition of the CZTS polycrystals has been examined. CZTS poly-crystal, ZnS, and SnS powders were mixed for adjusting the composition and were sintered at temperature of 400 °C. We evaluated polycrystal with the molar ratios of Cu/(Zn+Sn) = 0.79, Zn/Sn = 1.04, and S/(Cu+Zn+Sn) = 0.95. Then, we prepared CZTS film by PLD method using the CZTS polycrystal as a target. Composition content of the film was also evaluated to be the molar ratios of Cu/(Zn+Sn) = 1.14, Zn/Sn = 1.04, and S/(Cu+Zn+Sn) = 0.69. The film indicats slightly Cu-rich, and S-poor compositions, and no change of Zn/Sn rate. Definitely, we successfully performed composition control and improvement of composition uniformity for polycrystals by using the source materials of CZTS, ZnS, and SnS. Additionally, we prepared homogeneous CZTS film with either a kesterite or a stannite structure by PLD method.
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