MEMS可调谐电容器与RF SOI开关的低密度扇出非均匀集成

R. Hadizadeh, A. Laitinen, Niko Kuusniemi, V. Blaschke, D. Molinero, Eoin O'Toole, M. Pinheiro
{"title":"MEMS可调谐电容器与RF SOI开关的低密度扇出非均匀集成","authors":"R. Hadizadeh, A. Laitinen, Niko Kuusniemi, V. Blaschke, D. Molinero, Eoin O'Toole, M. Pinheiro","doi":"10.4071/2380-4505-2019.1.000051","DOIUrl":null,"url":null,"abstract":"\n Using Low-Density Fan-Out (LDFO) packaging technology, a radio frequency (RF) microelectromechanical systems (MEMS) tunable capacitor array composed of electrostatically actuated beams on 180nm high-voltage CMOS silicon was heterogeneously integrated with a single-pole four-terminal (SP4T) RF switch on 180nm CMOS silicon-on-insulator (SOI). The primary objective of this study was to determine the manufacturability of this System-in-Package (SiP) design, which is proven at time zero through survival of the MEMS device based on acceptable MEMS performance metrics.\n In addition, the RF SOI switch provides high-voltage electrostatic discharge (ESD) protection for the MEMS device. Capacitive MEMS structures are particularly sensitive to unpredictable electrostatic charging scenarios, such as handling after package assembly and printed circuit board (PCB) surface mount processing. Consequently, resistance to dielectric breakdown by means of robust ESD protection is a very desirable quality. Integrating the RF switch in close proximity with the MEMS device not only enables the ability to withstand charging scenarios in excess of 1kV (human body model), it mitigates the impact of parasitics on RF performance by minimizing interconnect lengths and complexity.","PeriodicalId":14363,"journal":{"name":"International Symposium on Microelectronics","volume":"20 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2019-12-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low-Density Fan-Out Heterogeneous Integration of MEMS Tunable Capacitor and RF SOI Switch\",\"authors\":\"R. Hadizadeh, A. Laitinen, Niko Kuusniemi, V. Blaschke, D. Molinero, Eoin O'Toole, M. Pinheiro\",\"doi\":\"10.4071/2380-4505-2019.1.000051\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Using Low-Density Fan-Out (LDFO) packaging technology, a radio frequency (RF) microelectromechanical systems (MEMS) tunable capacitor array composed of electrostatically actuated beams on 180nm high-voltage CMOS silicon was heterogeneously integrated with a single-pole four-terminal (SP4T) RF switch on 180nm CMOS silicon-on-insulator (SOI). The primary objective of this study was to determine the manufacturability of this System-in-Package (SiP) design, which is proven at time zero through survival of the MEMS device based on acceptable MEMS performance metrics.\\n In addition, the RF SOI switch provides high-voltage electrostatic discharge (ESD) protection for the MEMS device. Capacitive MEMS structures are particularly sensitive to unpredictable electrostatic charging scenarios, such as handling after package assembly and printed circuit board (PCB) surface mount processing. Consequently, resistance to dielectric breakdown by means of robust ESD protection is a very desirable quality. Integrating the RF switch in close proximity with the MEMS device not only enables the ability to withstand charging scenarios in excess of 1kV (human body model), it mitigates the impact of parasitics on RF performance by minimizing interconnect lengths and complexity.\",\"PeriodicalId\":14363,\"journal\":{\"name\":\"International Symposium on Microelectronics\",\"volume\":\"20 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-12-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Symposium on Microelectronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.4071/2380-4505-2019.1.000051\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Microelectronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.4071/2380-4505-2019.1.000051","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

采用低密度扇出(LDFO)封装技术,在180nm高电压CMOS硅片上集成了由静电驱动波束组成的射频微机电系统(MEMS)可调谐电容器阵列,并在180nm绝缘体上硅(SOI)上采用单极四端(SP4T)射频开关进行非均质集成。本研究的主要目的是确定该系统级封装(SiP)设计的可制造性,通过基于可接受的MEMS性能指标的MEMS器件的存活时间在零时证明了这一点。此外,RF SOI开关为MEMS器件提供高压静电放电(ESD)保护。电容式MEMS结构对不可预测的静电充电情况特别敏感,例如封装组装和印刷电路板(PCB)表面贴装处理后的处理。因此,通过强大的ESD保护来抵抗介质击穿是非常理想的品质。将射频开关与MEMS器件紧密集成,不仅能够承受超过1kV的充电场景(人体模型),还可以通过最小化互连长度和复杂性来减轻寄生对射频性能的影响。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Low-Density Fan-Out Heterogeneous Integration of MEMS Tunable Capacitor and RF SOI Switch
Using Low-Density Fan-Out (LDFO) packaging technology, a radio frequency (RF) microelectromechanical systems (MEMS) tunable capacitor array composed of electrostatically actuated beams on 180nm high-voltage CMOS silicon was heterogeneously integrated with a single-pole four-terminal (SP4T) RF switch on 180nm CMOS silicon-on-insulator (SOI). The primary objective of this study was to determine the manufacturability of this System-in-Package (SiP) design, which is proven at time zero through survival of the MEMS device based on acceptable MEMS performance metrics. In addition, the RF SOI switch provides high-voltage electrostatic discharge (ESD) protection for the MEMS device. Capacitive MEMS structures are particularly sensitive to unpredictable electrostatic charging scenarios, such as handling after package assembly and printed circuit board (PCB) surface mount processing. Consequently, resistance to dielectric breakdown by means of robust ESD protection is a very desirable quality. Integrating the RF switch in close proximity with the MEMS device not only enables the ability to withstand charging scenarios in excess of 1kV (human body model), it mitigates the impact of parasitics on RF performance by minimizing interconnect lengths and complexity.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信