基于砷化镓二极管的太赫兹180°连续移相器

2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Pub Date : 2021-08-29 DOI:10.1109/IRMMW-THz50926.2021.9567188

Hanyu Zhao, Huajie Liang, S. Liang, S. Gong, Yaxin Zhang

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引用次数: 0

摘要

提出了一种基于GaAs二极管的220 GHz单段移相器。在这种结构中，在矩形波导表面的中心插入一个移相单元。相移单元上的砷化镓二极管的状态由外部电压控制。然后改变负载支路的等效阻抗，导致相移。最后，在217.5GHz-225.5GHz范围内，可以实现180°的连续相移，插入损耗小于8.2dB，各状态之间的相移差约为22.5°。

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A terahertz 180° continuous phase shifter based on GaAs diode

This paper presents a single-segment phase shifter based on GaAs diode at 220 GHz. In this structure, a phase-shifting unit is inserted into the center of the rectangular waveguide surface. The state of the GaAs diode on the phase shifting unit is controlled by an external voltage. Then the equivalent impedance of the load branch is changed, resulting in phase shift. Finally, within 217.5GHz-225.5GHz, a continuous phase shift of 180° can be achieved, the insertion loss is less than 8.2dB and the phase shift difference between each state is about 22.5°.

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来源期刊

2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz)

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