垂直集成硅单晶MEMS开关

O. Aharon, S. Feldman, Y. Nemirovsky
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引用次数: 2

摘要

制作了一种直流-射频并联触点微机开关。MEMS器件的制造是在SOI晶圆上采用体微加工工艺进行的,然后垂直集成到微波电路晶圆上。对开关的拉入电压和固有频率进行了表征。此外,还测量了两种开关状态下的射频性能。本文所描述的封装开关的概念使我们能够提供独立的开关,而不依赖于所使用的射频电路衬底材料或技术。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Vertically integrated silicon single crystalline MEMS switch
A DC to RF shunt contact micro-electro-mechanical switch was fabricated. The fabrication of the MEMS device was preformed using a bulk micromachining process on an SOI wafer followed by a vertical integration to a microwave circuit wafer. The pull-in voltage and natural frequency of the switch were characterized. Also, RF performances at both switch states were measured. The concept of the packaged switch described in this paper enables us to offer a-stand alone switch, independent of the RF circuit substrate material or technology being used.
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