先进Cu/ULK BEOL工艺中短导金属线早期失效及其惠斯通电桥测试结构的EM表征

T. Jeong, S. Windu, Dong-Cheon Baek, Jinseok Kim, Kyuho Tak, Miji Lee, Hyuniun Choi, S. Pae, Jongwoo Park
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引用次数: 0

摘要

对短引线金属电迁移的早期失效进行了研究。采用Wheatstone电桥(WSB)测试结构和3参数对数正态分布,可以减少样本量和由早期故障导致的不良标准偏差控制的故障时间(TTF)变化,准确预测电磁寿命,并将其提高约280倍。特别是,EM TTF在较低的百分位数可以很好地表示为3参数对数正态。在空洞的物理方面,根据实验结果与蒙特卡罗模拟进行了比较,研究了短引线和长引线金属线的电磁行为,以支持Blech的背应力效应。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Early failure of short-lead metal line and its EM characterization with Wheatstone bridge test structure in advanced Cu/ULK BEOL process
Early failure of the short-lead metal line EM (Electromigration) is investigated. Applying Wheatstone bridge (WSB) test structure and 3-parameter lognormal distribution enables to reduce sample size and time-to-fail (TTF) variation governed by early fails causing a poor standard deviation, EM lifetime is accurately predicted and improved by ~280×. In particular, EM TTF at lower percentiles can be well represented by 3-parameter lognormal. With respect to physical aspects of void, EM behaviors of the short-lead and long-lead metal line are addressed based on experimental results compared with Monte-Carlo simulations to support the Blech's back-stress effects.
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