利用选择性钨化学气相沉积的纳米机电逻辑门

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII) Pub Date : 2019-06-23 DOI:10.1109/TRANSDUCERS.2019.8808313

N. Toan, Dong Zhao, N. Inomata, M. Toda, Yunheub Song, T. Ono

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引用次数: 0

摘要

设计、制作并评价了基于涂覆钨的静电驱动硅纳米机电(NEM)开关的NAND和NOR逻辑门。研究了高纵横比硅结构上的选择性保形W沉积。成功地制作了逻辑门，并对其功能进行了验证。这项工作不仅为制造复杂的机械逻辑系统提供了可能性，而且为减小电容间隙宽度开辟了途径。

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Nanoelectromechanical Logical Gates Utilising Selective Tungsten Chemical Vapor Deposition

NAND and NOR logical gates based on the electrostatically driven silicon nanoelectromechanical (NEM) switches coated tungsten (W) are designed, fabricated and evaluated. A selectively conformal W deposition on high aspect ratio silicon structures is investigated. Logical gates are successfully fabricated and all their functions have been proved. This work opens the possibility not only for producing the complex mechanical logic systems but also for a way to reducing capacitive gap width.

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来源期刊

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems & Eurosensors XXXIII (TRANSDUCERS & EUROSENSORS XXXIII)

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