通过附加快速热退火(RTA)改善GaInNAs的结晶度

LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242) Pub Date : 2001-11-12 DOI:10.1109/LEOS.2001.968969

M. Kondow, T. Kitatani, M. Aoki, S. Nakatsuka, M. Kudo

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引用次数: 2

摘要

我们发现，在750℃左右额外的RTA可以大大提高固体源MBE生长GaInNAs的光致发光强度，而在600℃左右相对较低的原位退火温度，即p-Al/sub 0.3/Ga/sub 0.7/As包层的生长温度，则足以提高GaInNAs的结晶度。因此，在70℃以上实现了10gb /s的GaInNAs边缘发射激光器操作。

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Improved crystallinity of GaInNAs by additional rapid thermal annealing (RTA)

We found that additional RTA at around 750 C greatly increases the photoluminescence (PL) intensity of solid-source MBE grown GaInNAs, while a relatively low in-situ annealing temperature, i.e., growth temperature for the p-Al/sub 0.3/Ga/sub 0.7/As cladding layer, at around 600 C is enough to improve the crystallinity of GaInNAs if additional RTA is performed. Consequently, a 10-Gb/s operation of a GaInNAs edge-emitting laser was achieved above 70 C.

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LEOS 2001. 14th Annual Meeting of the IEEE Lasers and Electro-Optics Society (Cat. No.01CH37242)

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