一个2.7-2.9 GHz的f类功率放大器，输出功率50W，效率% 75%，谐波含量低

2019 11th International Conference on Electrical and Electronics Engineering (ELECO) Pub Date : 2019-11-01 DOI:10.23919/ELECO47770.2019.8990654

Suheyb Bozdemir, Oguzhan Kizilbey, M. Yazgi, O. Palamutçuogullari, B. Yarman

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引用次数: 0

摘要

本文采用CGHV40050F氮化镓高电子迁移率晶体管(GaN HEMT)和NI AWR Microwave Office v14，设计并仿真了输出功率为50瓦、功率附加效率(PAE)为75%、增益为12 dB、低谐波含量的2.7 ~ 2.9 GHz f类功率放大器。计划在Rogers RT5880介电材料上实现，该材料厚度为0.508 mm，介电常数为2.20。

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A 2.7-2.9 GHz Class-F Power Amplifier with 50W Output Power, %75 Efficiency and Low Harmonic Content

In this paper, a 2.7-2.9 GHz class-F power amplifier with 50-Watt output power, 75% power added efficiency (PAE), 12 dB gain and low harmonic content was designed and simulated by using CGHV40050F Gallium Nitride high electron mobility transistor (GaN HEMT) and NI AWR Microwave Office v14. Realizations are planned to be made on Rogers RT5880 dielectric material which has 0.508 mm thickness and 2.20 dielectric constant.

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2019 11th International Conference on Electrical and Electronics Engineering (ELECO)

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